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| Samsung touts 96% lower-power NAND design |
12/3/2025 |
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Researchers investigate design based on ferroelectric transistor and demonstrate FeFET-based 3D NAND cells with near-zero pass voltage and up to five bits per cell.
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| Global growth is holding up better than expected |
12/2/2025 |
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Global growth is holding up better than expected as an artificial intelligence investment boom helps offset some of the shock from US tariff hikes, the OECD said, nudging up its outlook for some major economies.
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| Micron preps $9.6B HBM plant in Japan |
12/2/2025 |
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Micron Technology plans to invest $9.6 billion in a high-bandwidth memory facility in Hiroshima, Japan, according to reports. The project, supported by up to $3.2 billion in government subsidies, is designed to address the rising demand for AI memory, potentially shifting the HBM market share in Micron's favor.
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| Global DRAM Revenue Soars 31% in 3Q 2025 |
12/1/2025 |
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Significant increases in conventional DRAM contract prices and growing HBM volumes drove the global DRAM industry revenue to $41.4 billion in 3Q 2025.
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| Trump team wants Taiwan to train US chip plant workers |
11/27/2025 |
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Under the arrangement, Taiwanese companies including TSMC (2330.TW), opens new tab, the world's largest contract chipmaker, would send new capital and workers to expand their U.S. operations and train U.S. workers.
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| AI data centers shift to LPDDR to cut energy use |
11/27/2025 |
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Data centers supporting AI services are turning to low-power double data rate memory to reduce energy consumption, with Nvidia, Intel and other tech firms integrating LPDDR into server memory modules. This shift is prompting industry leaders Samsung Electronics and SK Hynix to accelerate development to maintain a technological edge as Chinese competitors advance their own LPDDR products.
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| Rapidus to start construction on 1.4nm fab in 2027 |
11/26/2025 |
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According to Nikkei Asia, this move is expected to help the Japanese chipmaker close the gap with the Taiwanese chip-making giant, which has already revealed its 1.4-nm technology earlier this year. The company also said that it will begin full-scale research and development on the node starting next year.
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