An analysis has emerged that SK Hynix has introduced hybrid bonding early to launch HBM5, the 8th-generation high-bandwidth memory (HBM), in 2029.

According to market research firm Counterpoint Research on the 6th, SK Hynix has introduced the integrated hybrid bonding solution from Applied Materials and BE Semiconductor Industries (BESI) early on. Through this, it is believed that they have secured a strategic advantage in meeting various performance requirements such as bandwidth, latency, power, and speed.

Counterpoint Research forecasts that while HBM can use thermal compression bonding (TCB) up to 16 layers due to relaxed standards from the Joint Electron Device Engineering Council (JEDEC), major companies like NVIDIA are demanding higher bandwidth and efficiency, making the adoption of hybrid bonding inevitable in the long term. Accordingly, major memory semiconductor companies such as Samsung Electronics, SK Hynix, and Micron are pushing to adopt hybrid bonding from HBM4 onwards to address next-generation AI demand. Hybrid bonding can reduce the physical height and integration constraints of graphics processing unit (GPU) packages by decreasing the spacing between dies and stacking height.

Counterpoint Research stated, “HBM5 will be a substantial turning point for hybrid bonding,” and “We expect SK Hynix to release HBM5 around 2029–2030 in line with the next-generation AI GPU cycle,” adding, “The adoption of hybrid bonding equipment is expected to provide a significant strategic advantage in maintaining leadership in the HBM market.”

By: DocMemory
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