DocMemory
 
Home
News
Products
Shop
Memory
Corporate
Contact
 

News
Industry News
Publications
CST News
Help/Support
Member Area
Tester Brochure
Demo Library
Software
Tester FAQs

biology medicine news product technology definition

Thursday, September 20, 2018
Memory Industry News
Email ArticlePrinter Format PreviousNext

New partnership in MRAM developement


Wednesday, October 18, 2017

MRAM developer Spin Transfer Technologies (STT) and capital equipment vendor Tokyo Electron Ltd. (TEL) have entered into a collaborative engineering program to jointly develop process technologies for SRAM- and DRAM-class spin-transfer torque (ST) MRAM devices.

The project will combine TEL's ST-MRAM deposition tool and knowledge of the formation capabilities of magnetic tools with STT's high-endurance perpendicular magnetic tunnel junction (pMTJ) design and device fabrication technology, the companies said. The goal of the project is to further advance ST-MRAM to provide previously unachievable levels of speed, density and endurance, they said.

MRAM (magnetoresistive random access memory) has long been seen as a potential replacement for SRAM, DRAM and flash, but development, which began in earnest in the 1990s, has been slow. To date, only one company, Everspin Technologies, has shipped working MRAM products. Everspin has been shipping MRAM since 2006, when it was part of Freescale Semiconductor, and claims to have shipped more than 60 million MRAM devices.

Embedded SRAM pervasive in mobile, computing and industrial applications is considered a fast and high endurance memory, but is also costly, power hungry and volatile. ST-MRAM, which is more compact, is considered less costly, nonvolatile and requires less power when storing data. But further improvements especially in terms of fast switching and endurance are needed for ST-MRAM to match or exceed SRAM performance.

Last August, Everspin became the first vendor to announce it was sampling MRAM with pMTJs considered by all vendors developing MRAM to be the technology offer the best scalability, shape dependence and magnetic scalability. In January of this year, STT also began sampling pMTJs.

STT and TEL said the collaborative agreement would further each company's goal of offering compelling MRAM solutions for the embedded SRAM market initially and, eventually, the standalone DRAM market. The companies aim to develop MRAM is pMTJs smaller than 30nm, more dense than today's commercially available products.

Tom Sparkman, who took over as CEO of STT in July, said in a press statement that the partnership with TEL would speed the development of the company's technology for replacing SRAM and DRAM.

"We believe the adoption of ST-MRAM will materially exceed current expectations, and we are excited to work with TEL to revolutionize the ST-MRAM market by achieving the speed, density and endurance the industry needs," Sparkman said.

By: DocMemory
Copyright 2017 CST, Inc. All Rights Reserved

Email ArticlePrinter Format PreviousNext
Latest Industry News
Macronix seeks funding to build 3D NAND9/19/2018
Trump's $200 billion tariff list includes semiconductor material and components9/19/2018
Amazon opens Amazon Storefront for small and medium size sellers9/19/2018
Audi offers luxury car subscription plan9/19/2018
Vendors race to provide HD image camera prototype for auomotive applications9/18/2018
Taiwan foundry sales up 6,2% in quarter9/18/2018
Amazon admitted employees selling company data company secret9/18/2018
Nextlink received $281 million FCC grant to develope Internet for rural areas9/18/2018
Startup Wasabi Technologies wants to challenge Amazon in cloud services9/17/2018
Adesto Technologies said future of automotive electronics goes with embedded ReRAM9/17/2018

CST Inc. Memory Tester DDR Tester
Copyright © 1994 - 2018 CST, Inc. All Rights Reserved