Monday, February 13, 2012
Memory chipmaker Micron Technology Inc. (Boise, Idaho) has launched a lower power version of the DDR3 type of DRAM under the label DDR3Lm with 2- and 4-Gbit capacity memories.
The memories are designed to consume less power for self-refresh and therefore provide low standby power and longer battery life. Micron said they are suitable for use with thin, light computers and tablets.
The 2- and 4-Gbit DDR3Lm DRAM consumes 50 percent less power in self-refresh compared with their DDR3L equivalents. The memories are capable of 1600-megatransfers per second. Both memories are being moved to Micron's 30-nm class process technology to further optimize power and performance with the 4-Gbit device having target standby current draw of 3.7-mA yet still supporting data rates of up to 1,866 megatransfers per second.
Micron did not indicate how the lower power standby had been achieved.
The DDR3Lm low-power product line is available for sampling now, with volume production on 30-nm class devices expected to begin in 2Q12.
Copyright © 2012 CST, Inc. All Rights Reserved